tda1015, Ham- CB Radio, Karty katalogowe
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INTEGRATED CIRCUITS
DATA SHEET
TDA1015
1 to 4 W audio power amplifier
Product specification
File under Integrated Circuits, IC01
November 1982
Philips Semiconductors
Product specification
1 to 4 W audio power amplifier
TDA1015
The TDA1015 is a monolithic integrated audio amplifier circuit in a 9-lead single in-line (SIL) plastic package. The device
is especially designed for portable radio and recorder applications and delivers up to 4 W in a 4
W
load impedance. The
very low applicable supply voltage of 3,6 V permits 6 V applications.
Special features are:
·
single in-line (SIL) construction for easy mounting
·
separated preamplifier and power amplifier
·
high output power
·
thermal protection
·
high input impedance
·
low current drain
·
limited noise behaviour at radio frequencies
QUICK REFERENCE DATA
Supply voltage range
V
P
3,6 to 18
V
Peak output current
I
OM
max. 2,5
A
Output power at d
tot
= 10%
V
P
= 12 V; R
L
= 4
W
P
o
typ. 4,2
W
V
P
= 9 V; R
L
= 4
W
P
o
typ. 2,3
W
V
P
= 6 V; R
L
= 4
W
P
o
typ. 1,0
W
Total harmonic distortion at P
o
= 1 W; R
L
= 4
W
d
tot
typ. 0,3
%
Input impedance
preamplifier (pin 8)
|Z
i
|
>
100
k
W
power amplifier (pin 6)
|Z
i
|
typ. 20
k
W
Total quiescent current
I
tot
typ. 14
mA
Operating ambient temperature
T
amb
-
25 to + 150
°
C
Storage temperature
T
stg
-
55 to + 150
°
C
PACKAGE OUTLINE
9-lead SIL; plastic (SOT110B); SOT110-1; 1996 August 13.
November 1982
2
Philips Semiconductors
Product specification
1 to 4 W audio power amplifier
TDA1015
November 1982
3
Philips Semiconductors
Product specification
1 to 4 W audio power amplifier
TDA1015
RATINGS
Limiting values in accordance with Absolute Maximum System (IEC 134)
Supply voltage
V
P
max.
18
V
Peak output current
I
OM
max.
2,5
A
Total power dissipation
see derating curve Fig.2
Storage temperature
T
stg
-
55 to + 150
°
C
Operating ambient temperature
T
amb
-
25 to + 150
°
C
A.C. short-circuit duration of load
during sine-wave drive; V
P
= 12 V
t
sc
max.
100 hours
Fig.2 Power derating curve.
HEATSINK DESIGN
Assume V
P
= 12 V; R
L
= 4
W
; T
amb
= 45
°
C maximum.
The maximum sine-wave dissipation is 1,8 W.
R
th j-a
=R
th j-tab
+R
th tab-h
+R
th h-a
=
150 45
–
1
,
= 58 K/W.
Where R
th j-a
of the package is 45 K/W, so no external heatsink is required.
November 1982
4
----------------------
Philips Semiconductors
Product specification
1 to 4 W audio power amplifier
TDA1015
D.C. CHARACTERISTICS
Supply voltage range
V
P
3,6 to 18
V
Repetitive peak output current
I
ORM
<
2
A
Total quiescent current at V
P
= 12 V
I
tot
typ.
14
mA
<
25
mA
A.C. CHARACTERISTICS
T
amb
= 25
C; V
P
= 12 V; R
L
= 4
W
; f = 1 kHz unless otherwise specified; see also Fig.3.
A.F. output power at d
tot
= 10% (note 1)
with bootstrap:
V
P
= 12 V; R
L
= 4
W
P
o
typ.
4,2
W
V
P
= 9 V; R
L
= 4
W
P
o
typ.
2,3
W
V
P
= 6 V; R
L
= 4
W
P
o
typ.
1,0
W
without bootstrap:
V
P
= 12 V; R
L
= 4
W
P
o
typ.
3,0
W
Voltage gain:
preamplifier (note 2)
G
v1
typ.
23
dB
power amplifier
G
v2
typ.
29
dB
total amplifier
G
v tot
typ.
52
dB
49 to 55
dB
Total harmonic distortion at P
o
= 1,5 W
d
tot
typ.
0,3
%
<
1,0
%
Frequency response;
-
3 dB (note 3)
B
60 Hz to 15
kHz
Input impedance:
preamplifier (note 4)
|Z
i1
|
>
100
k
W
typ.
200
k
W
power amplifier
|Z
i2
|
typ.
20
k
W
Output impedance preamplifier
|Z
o1
|
typ.
1
k
W
Output voltage preamplifier (r.m.s. value); d
tot
< 1% (note 2)
V
o(rms)
typ.
0,8
V
Noise output voltage (r.m.s. value; note 5)
R
S
= 0
W
V
n(rms)
typ.
0,2
mV
R
S
= 10 k
W
V
n(rms)
typ.
0,5
mV
Noise output voltage at f = 500 kHz (r.m.s. value); B = 5 kHz; R
S
= 0
W
V
n(rms)
typ.
8
m
V
Ripple rejection (note 6); f = 100 Hz
RR
typ.
38
dB
November 1982
5
°
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