tda7050t, Ham- CB Radio, Karty katalogowe
[ Pobierz całość w formacie PDF ]
INTEGRATED CIRCUITS
DATA SHEET
TDA7050T
Low voltage mono/stereo power
amplifier
Product specification
File under Integrated Circuits, IC01
July 1994
Philips Semiconductors
Product specification
Low voltage mono/stereo power amplifier
TDA7050T
GENERAL DESCRIPTION
The TDA7050T is a low voltage audio amplifier for small radios with headphones (such as watch, pen and pocket radios)
in mono (bridge-tied load) or stereo applications.
Features
·
Limited to battery supply application only (typ. 3 and 4 V)
·
Operates with supply voltage down to 1,6 V
·
No external components required
·
Very low quiescent current
·
Fixed integrated gain of 26 dB, floating differential input
·
Flexibility in use
-
mono BTL as well as stereo
·
Small dimension of encapsulation (see package design example).
QUICK REFERENCE DATA
Supply voltage range
V
P
1,6 to 6,0 V
Total quiescent current (at V
P
= 3 V)
I
tot
typ.
3,2 mA
Bridge tied load application (BTL)
Output power at R
L
= 32
W
V
P
= 3 V; d
tot
= 10%
P
o
typ.
140 mW
D.C. output offset voltage between the outputs
D
V|
max.
70 mV
Noise output voltage (r.m.s. value)
at f = 1 kHz; R
S
= 5 k
W
V
no(rms)
typ.
140
m
V
Stereo application
Output power at R
L
= 32
W
d
tot
= 10%; V
P
= 3 V
P
o
typ.
35 mW
d
tot
= 10%; V
P
= 4,5 V
P
o
typ.
75 mW
Channel separation at R
S
= 0
W
; f = 1 kHz
a
typ.
40 dB
Noise output voltage (r.m.s. value)
at f = 1 kHz; R
S
= 5 k
W
V
no(rms)
typ.
100
m
V
PACKAGE OUTLINE
8-lead mini-pack; plastic (SO8; SOT96A); SOT96-1; 1996 July 24.
July 1994
2
|
Philips Semiconductors
Product specification
Low voltage mono/stereo power amplifier
TDA7050T
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Supply voltage
V
P
max.
6 V
Peak output current
I
OM
max.
150 mA
Total power dissipation
see derating curve Fig.1
Storage temperature range
T
stg
-
55 to
+
150
°
C
Crystal temperature
T
c
max.
100
°
C
A.C. and d.c. short-circuit duration
at V
P
= 3,0 V (during mishandling)
t
sc
max.
5 s
600
MLB950
handbook, halfpage
P
tot
(mW)
400
200
0
50
0
50
100
T ( C)
o
150
amb
Fig.1 Power derating curve.
SO PACKAGE DESIGN EXAMPLE
To achieve the small dimension of the encapsulation the SO package is preferred with only 8 pins. Because a heatsink
is not applicable, the dissipation is limited by the thermal resistance of the 8-pin SO encapsulation until:
–
R
th j-a
T
amb
=
100 60
=
0.25 W
July 1994
3
T
jmax
–
160
----------------------------------
----------------------
Philips Semiconductors
Product specification
Low voltage mono/stereo power amplifier
TDA7050T
CHARACTERISTICS
V
P
=
3 V; f
=
1 kHz; R
L
=
32
W
; T
amb
=
25
°
C; unless otherwise specified
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Supply
Supply voltage
V
P
1,6
-
6,0
V
Total quiescent current
I
tot
-
3,2
4
mA
Bridge-tied load application (BTL);
see Fig.4
Output power
*
V
P
= 3,0 V; d
tot
= 10%
P
o
-
140
-
mW
V
P
= 4,5 V; d
tot
= 10% (R
L
= 64
W
)
P
o
-
150
-
mW
Voltage gain
G
v
-
32
-
dB
Noise output voltage (r.m.s. value)
R
S
= 5 k
W
; f = 1 kHz
V
no(rms)
-
140
-
m
V
R
S
= 0
W
; f = 500 kHz; B = 5 kHz
V
no(rms)
-
tbf
-
m
V
D.C. output offset voltage (at R
S
= 5 k
W
)
|
D
V|
-
-
70
mV
Input impedance (at R
S
=
¥
)
|Z
i
|
1
-
-
M
W
Input bias current
I
i
-
40
-
nA
Stereo application;
see Fig.5
Output power
*
V
P
= 3,0 V; d
tot
= 10%
P
o
-
35
-
mW
V
P
= 4,5 V; d
tot
= 10%
P
o
-
75
-
mW
Voltage gain
G
v
24.5
26
27.5
dB
Noise output voltage (r.m.s. value)
R
S
= 5 k
W
; f = 1 kHz
V
no(rms)
-
100
-
m
V
R
S
= 0
W
; f = 500 kHz; B = 5 kHz
V
no(rms)
-
tbf
-
m
V
Channel separation
R
S
= 0
W
; f = 1 kHz
a
30
40
-
dB
Input impedance (at R
S
=
¥
)
|Z
i
|
2
-
-
M
W
Input bias current
I
i
-
20
-
nA
*
Output power is measured directly at the output pins of the IC. It is shown as a function of the supply voltage in Fig.2
(BTL application) and Fig.3 (stereo application).
July 1994
4
Philips Semiconductors
Product specification
Low voltage mono/stereo power amplifier
TDA7050T
Fig.2 Output power across the load impedance (R
L
) as a function of supply voltage (V
P
) in BTL application.
Measurements were made at f = 1 kHz; d
tot
= 10%; T
amb
= 25
°
C.
Fig.3 Output power across the load impedance (R
L
) as a function of supply voltage (V
P
) in stereo application.
Measurements were made at f = 1 kHz; d
tot
= 10%; T
amb
= 25
°
C.
July 1994
5
[ Pobierz całość w formacie PDF ]