tfms5xxx, Ham- CB Radio, Karty katalogowe
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TFMS 5..0
Photo Modules for PCM Remote Control Systems
Available types for different carrier frequencies
Type
f
0
Type
f
0
TFMS 5300
30 kHz
TFMS 5330
33 kHz
TFMS 5360
36 kHz
TFMS 5370
36.7 kHz
TFMS 5380
38 kHz
TFMS 5400
40 kHz
TFMS 5560
56 kHz
Description
The TFMS 5..0 – series are miniaturized receivers for in-
frared remote control systems. PIN diode and
preamplifier are assembled on lead frame, the epoxy
package is designed as IR filter.
The demodulated output signal can directly be decoded
by a microprocessor. The main benefit is the reliable
function even in disturbed ambient and the protection
against uncontrolled output pulses.
GND
V
S
OUT
94 8691
Features
Photo detector and preamplifier in one package
Improved shielding against electric field
disturbance
Output active low
(active high modules: TFMS 5..9)
5 Volt supply voltage, low power consumption
Internal filter for PCM frequency
TTL and CMOS compatibility
High immunity against ambient light
Continuous transmission possible (t
pi
/T0.4)
Block Diagram
2
V
S
Input
Control
Circuit
100 k
3
OUT
PIN
AGC
Band
Pass
Demodu-
lator
1
GND
94 8136
TELEFUNKEN Semiconductors
Rev. A4, 15-Jul-96
1 (6)
TFMS 5..0
Absolute Maximum Ratings
T
amb
= 25C
Parameter
Test Conditions
Symbol
Value
Unit
Supply Voltage
(Pin 2)
V
S
–0.3...6.0
V
Supply Current
(Pin 2)
I
S
5
mA
Output Voltage
(Pin 3)
V
O
–0.3...6.0
V
Output Current
(Pin 3)
I
O
5
mA
Junction Temperature
T
j
100
C
Storage Temperature Range
T
stg
–25...+85
C
Operating Temperature Range
T
amb
–25...+85
C
Power Consumption
(T
amb
85 C)
P
tot
50
mW
Soldering Temperature
t 10 s, 1 mm from case
T
sd
260
C
Basic Characteristics
T
amb
= 25C
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Supply Current (Pin 2)
V
S
= 5 V, E
v
= 0
I
SD
0.4
0.5
0.8
mA
pp y
(
)
V
S
= 5 V, E
v
= 40 klx, sunlight
I
SH
1.0
mA
Transmission Distance
E
v
= 0, test signal see fig.7,
IR diode TSIP5201, I
F
= 0.3 A
d
35
m
Output Voltage Low (Pin 3) I
OSL
= 0.5 mA,E
e
= 0.7 mW/m
2
,
f = f
o
, t
p
/T = 0.4
V
OSL
250
mV
Irradiance (30 – 40 kHz)
Pulse width tolerance:
t
po
=t
pi
±
E
e
min
0.3
0.5 mW/m
2
160s, test signal (see fig.7)
Irradiance (56 kHz)
Pulse width tolerance:
t
po
=t
pi
±
E
e
min
0.4
0.7 mW/m
2
160s, test signal (see fig.7)
Irradiance
E
e
max
20
W/m
2
Directivity
Angle of half transmission distance
j
1/2
±
55
deg
Application Circuit
330 *)
+ 5 V **)
2
4.7 F *
)
TFM. 5..0
>10 k
optional
TSUS 5...
TSIP 5...
C
3
94 8137
1
GND
*) only necessary to suppress power supply disturbances
**) tolerated supply voltage range : 4.5 V< V
S
< 5.5 V
2 (6)
TELEFUNKEN Semiconductors
Rev. A4, 15-Jul-96
TFMS 5..0
Typical Characteristics
(T
amb
= 25C unless otherwise specified)
1.0
2.0
0.8
f(E)=f
0
1.6
0.6
1.2
0.4
0.8
0.2
f = f
0
5%
f ( 3 dB ) = f
0
/10
0.4
0.0
0.0
0.7
0.8
0.9
1.0
1.1
1.2
1.3
0.0
0.4
0.8
1.2
1.6
2.0
94 8143
f/f
0
– Relative Frequency
94 8147
E – Field Strength of Disturbance ( kV / m )
Figure 1. Frequency Dependence of Responsivity
Figure 4. Sensitivity vs. Electric Field Disturbances
1200
100
1000
Input Burst Duration
f = f
0
800
10
600
10 kHz
400
1
= 950 nm, Optical Test Signal, Fig.7
100 Hz
200
0
0.1
0.1
1.0
10.0
100.0
0.1
1
10
100
1000
94 8145
E
e
– Irradiance ( mW / m
2
)
94 8148
V
sRMS
–
AC Voltage on DC Supply Voltage ( mV )
Figure 2. Sensitivity in Dark Ambient
Figure 5. Sensitivity vs. Supply Voltage Disturbances
100.0
1.0
Correlation with Ambient Light Sources
( Disturbance Effect ) : 10W/m
2
1.4 klx
( Stand.Illum.A, T = 2855 K )8.2 klx
( Daylight, T = 5900 K )
0.8
Sensitivity in dark Ambient
10.0
0.6
1.0
0.4
0.2
Ambient, = 950 nm
0.1
0.0
0.01
0.1
1.0
10.0
100.0
–30
0
30
60
90
94 8146
E – Irradiance ( W / m
2
)
94 8149
T
amb
– Ambient Temperature ( °C )
Figure 3. Sensitivity in Bright Ambient
Figure 6. Sensitivity vs. Ambient Temperature
TELEFUNKEN Semiconductors
Rev. A4, 15-Jul-96
3 (6)
TFMS 5..0
E
e
Optical Test Signal
( IR diode TSIP 5201, I
F
= 1.5 A, 30 pulses, f = f
0
, T = 10 ms )
1.0
0.8
T
on
t
t
pi
*
0.6
T
T
off
* t
pi
400 s is recommended for optimal function
0.4
V
O
Output Signal
94 8133
0.2
= 950 nm, Optical Test Signal, Fig.8
V
OH
t
po
= t
pi
160 s
0.0
V
OL
0.1
1
10
100
1000
10000
t
94 8151
E
e
– Irradiance ( mW / m
2
)
t
po
Figure 7. Output Function
Figure 10. Output Pulse Diagram
Optical Test Signal
E
e
1.0
0.8
V
s
= 5 V
600 s
600 s
t
0.6
T = 60 ms
94 8134
0.4
V
O
Output Signal
, ( see Fig.10 )
0.2
V
OH
0.0
V
OL
–30
0
30
60
90
T
on
T
off
t
94 8150
T
amb
– Ambient Temperature ( °C )
Figure 8. Output Function
Figure 11. Supply Current vs. Ambient Temperature
1.0
8
0.8
6
0.6
4
0.4
2
0.2
0
0.0
0.05
0.15
0.25
0.35
0.45
800
900
1000
1100
94 8144
t
p
/ T – Duty Cycle
94 8154
– Wavelength ( nm )
Figure 9. Sensitivity vs. Duty Cycle
Figure 12. Spectral Response
4 (6)
TELEFUNKEN Semiconductors
Rev. A4, 15-Jul-96
TFMS 5..0
–20
–10
0
1
0
20
–20
–10
0
1
0
20
–30
–30
y
x
–40
–40
0.6
0.4
0.2
0
0.2
0.4
0.6
0.6
0.4
0.2
0
0.2
0.4
0.6
d
rel
– Relative Transmission Distance
94 8152
94 8153
d
rel
– Relative Transmission Distance
Figure 13. Vertical Directivity j
y
Figure 14. Horizontal Directivity j
x
Dimensions in mm
96 12116
TELEFUNKEN Semiconductors
Rev. A4, 15-Jul-96
5 (6)
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